Available Models

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Model No. Featured Material Nominal Height Pitch Design Description Part Number Quantity STR3-180P Silicon dioxide coated with a uniform layer of platinum 18 nm 3 µm pitch grid 8 mm x 8 mm silicon die with 1.2 mm x 1.2 mm measurement area 407_VLSI STR3-440P Silicon dioxide coated with a uniform layer of platinum 44 nm 3 µm pitch grid 8 mm x 8 mm silicon die with 1.2 mm x 1.2 mm measurement area 408_VLSI STR3-1000P Silicon dioxide coated with a uniform layer of platinum 100 nm 3 µm pitch grid 8 mm x 8 mm silicon die with 1.2 mm x 1.2 mm measurement area 409_VLSI STR3-1800P Silicon dioxide coated with a uniform layer of platinum 180 nm 3 µm pitch grid 8 mm x 8 mm silicon die with 1.2 mm x 1.2 mm measurement area 410_VLSI STR10-180P Silicon dioxide coated with a uniform layer of platinum 18 nm 10 µm pitch grid 8 mm x 8 mm silicon die with 4 mm x 4 mm measuremement area 400_VLSI STR10-440P Silicon dioxide coated with a uniform layer of platinum 44 nm 10 µm pitch grid 8 mm x 8 mm silicon die with 4 mm x 4 mm measuremement area 402_VLSI STR10-1000S Silicon dioxide 100 nm 10 µm pitch grid 8 mm x 8 mm silicon die with 4 mm x 4 mm measurement area 399_VLSI STR10-1800P Silicon dioxide coated with a uniform layer of platinum 180 nm 10 µm pitch grid 8 mm x 8 mm silicon die with 4 mm x 4 mm measurement area